central semiconductor corp. tm process CP576 power transistor pnp - amp/switch transistor chip princip al device types mj15004 process multi epitaxial planar die size 203 x 227 mils die thickness 12.5 1.0 mils base bonding pad area 38 x 76 mils emitter bonding pad area 47 x 72 mils top side metalization al - 50,000? back side metalization ag - 10,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r2 (1-august 2002) gross die per 4 inch w afer 240
central semiconductor corp. tm process CP576 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
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